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IRF630L

IRF630L

For Reference Only

Part Number IRF630L
PNEDA Part # IRF630L
Description MOSFET N-CH 200V 9A TO-262
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF630L Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF630L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF630L, IRF630L Datasheet (Total Pages: 9, Size: 277.77 KB)
PDFIRF630L Datasheet Cover
IRF630L Datasheet Page 2 IRF630L Datasheet Page 3 IRF630L Datasheet Page 4 IRF630L Datasheet Page 5 IRF630L Datasheet Page 6 IRF630L Datasheet Page 7 IRF630L Datasheet Page 8 IRF630L Datasheet Page 9

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IRF630L Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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