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IRF640FP

IRF640FP

For Reference Only

Part Number IRF640FP
PNEDA Part # IRF640FP
Description MOSFET N-CH 200V 18A TO-220FP
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,068
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF640FP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberIRF640FP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF640FP, IRF640FP Datasheet (Total Pages: 14, Size: 332.79 KB)
PDFIRF640FP Datasheet Cover
IRF640FP Datasheet Page 2 IRF640FP Datasheet Page 3 IRF640FP Datasheet Page 4 IRF640FP Datasheet Page 5 IRF640FP Datasheet Page 6 IRF640FP Datasheet Page 7 IRF640FP Datasheet Page 8 IRF640FP Datasheet Page 9 IRF640FP Datasheet Page 10 IRF640FP Datasheet Page 11

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IRF640FP Specifications

ManufacturerSTMicroelectronics
SeriesMESH OVERLAY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1560pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

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