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IRF640NLPBF

IRF640NLPBF

For Reference Only

Part Number IRF640NLPBF
PNEDA Part # IRF640NLPBF
Description MOSFET N-CH 200V 18A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 23,016
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF640NLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF640NLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF640NLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1160pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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