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IRF640PBF

IRF640PBF

For Reference Only

Part Number IRF640PBF
PNEDA Part # IRF640PBF
Description MOSFET N-CH 200V 18A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,428
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF640PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF640PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF640PBF, IRF640PBF Datasheet (Total Pages: 8, Size: 283.37 KB)
PDFIRF640PBF Datasheet Cover
IRF640PBF Datasheet Page 2 IRF640PBF Datasheet Page 3 IRF640PBF Datasheet Page 4 IRF640PBF Datasheet Page 5 IRF640PBF Datasheet Page 6 IRF640PBF Datasheet Page 7 IRF640PBF Datasheet Page 8

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IRF640PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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