Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF644STRR

IRF644STRR

For Reference Only

Part Number IRF644STRR
PNEDA Part # IRF644STRR
Description MOSFET N-CH 250V 14A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF644STRR Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF644STRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF644STRR Datasheet
  • where to find IRF644STRR
  • Vishay Siliconix

  • Vishay Siliconix IRF644STRR
  • IRF644STRR PDF Datasheet
  • IRF644STRR Stock

  • IRF644STRR Pinout
  • Datasheet IRF644STRR
  • IRF644STRR Supplier

  • Vishay Siliconix Distributor
  • IRF644STRR Price
  • IRF644STRR Distributor

IRF644STRR Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IRF7663TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2520pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro8™

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

MMSF3P02HDR2SG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 16V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRL3716STRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

79nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5090pF @ 10V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

31A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 30A, 5V

Vgs(th) (Max) @ Id

2.5V @ 15mA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 300V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

SIR472ADP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1040pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 14.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

APT8024JLL

APT8024JLL

Microsemi

MOSFET N-CH 800V 29A SOT-227

CY14B256LA-SZ25XIT

CY14B256LA-SZ25XIT

Cypress Semiconductor

IC NVSRAM 256K PARALLEL 32SOIC

USB3340-EZK-TR

USB3340-EZK-TR

Microchip Technology

IC TRANSCEIVER 1/1 32QFN

LT1112IS8#TRPBF

LT1112IS8#TRPBF

Linear Technology/Analog Devices

IC OPAMP GP 2 CIRCUIT 8SO

GRM21AR72E102KW01D

GRM21AR72E102KW01D

Murata

CAP CER 1000PF 250V X7R 0805

MMBF170

MMBF170

ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23

LT1167ACS8#PBF

LT1167ACS8#PBF

Linear Technology/Analog Devices

IC INST AMP 1 CIRCUIT 8SO

7447709330

7447709330

Wurth Electronics

FIXED IND 33UH 4.2A 45 MOHM SMD

AEDS-8011-A11

AEDS-8011-A11

Broadcom

ROTARY ENCODER OPTICAL 500PPR

74VHC14MTCX

74VHC14MTCX

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

MC33990D

MC33990D

NXP

IC TRANSCEIVER HALF 1/1 8SOIC

250R05L0R4AV4T

250R05L0R4AV4T

Johanson Technology

CAP CER 0.4PF 25V C0G/NP0 0201