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IRF6601

IRF6601

For Reference Only

Part Number IRF6601
PNEDA Part # IRF6601
Description MOSFET N-CH 20V 26A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6601 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6601
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6601, IRF6601 Datasheet (Total Pages: 13, Size: 265.13 KB)
PDFIRF6601 Datasheet Cover
IRF6601 Datasheet Page 2 IRF6601 Datasheet Page 3 IRF6601 Datasheet Page 4 IRF6601 Datasheet Page 5 IRF6601 Datasheet Page 6 IRF6601 Datasheet Page 7 IRF6601 Datasheet Page 8 IRF6601 Datasheet Page 9 IRF6601 Datasheet Page 10 IRF6601 Datasheet Page 11

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IRF6601 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 26A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3440pF @ 15V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 42W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MT
Package / CaseDirectFET™ Isometric MT

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