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IRF6609TR1

IRF6609TR1

For Reference Only

Part Number IRF6609TR1
PNEDA Part # IRF6609TR1
Description MOSFET N-CH 20V 31A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,232
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6609TR1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6609TR1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6609TR1, IRF6609TR1 Datasheet (Total Pages: 10, Size: 201.1 KB)
PDFIRF6609TR1 Datasheet Cover
IRF6609TR1 Datasheet Page 2 IRF6609TR1 Datasheet Page 3 IRF6609TR1 Datasheet Page 4 IRF6609TR1 Datasheet Page 5 IRF6609TR1 Datasheet Page 6 IRF6609TR1 Datasheet Page 7 IRF6609TR1 Datasheet Page 8 IRF6609TR1 Datasheet Page 9 IRF6609TR1 Datasheet Page 10

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IRF6609TR1 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2mOhm @ 31A, 10V
Vgs(th) (Max) @ Id2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs69nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6290pF @ 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MT
Package / CaseDirectFET™ Isometric MT

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