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IRF6619TR1PBF

IRF6619TR1PBF

For Reference Only

Part Number IRF6619TR1PBF
PNEDA Part # IRF6619TR1PBF
Description MOSFET N-CH 20V 30A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 18,576
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6619TR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6619TR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6619TR1PBF, IRF6619TR1PBF Datasheet (Total Pages: 9, Size: 289.15 KB)
PDFIRF6619TRPBF Datasheet Cover
IRF6619TRPBF Datasheet Page 2 IRF6619TRPBF Datasheet Page 3 IRF6619TRPBF Datasheet Page 4 IRF6619TRPBF Datasheet Page 5 IRF6619TRPBF Datasheet Page 6 IRF6619TRPBF Datasheet Page 7 IRF6619TRPBF Datasheet Page 8 IRF6619TRPBF Datasheet Page 9

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IRF6619TR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5040pF @ 10V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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