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IRF6622TR1PBF

IRF6622TR1PBF

For Reference Only

Part Number IRF6622TR1PBF
PNEDA Part # IRF6622TR1PBF
Description MOSFET N-CH 25V 15A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6622TR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6622TR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6622TR1PBF, IRF6622TR1PBF Datasheet (Total Pages: 10, Size: 245.73 KB)
PDFIRF6622TRPBF Datasheet Cover
IRF6622TRPBF Datasheet Page 2 IRF6622TRPBF Datasheet Page 3 IRF6622TRPBF Datasheet Page 4 IRF6622TRPBF Datasheet Page 5 IRF6622TRPBF Datasheet Page 6 IRF6622TRPBF Datasheet Page 7 IRF6622TRPBF Datasheet Page 8 IRF6622TRPBF Datasheet Page 9 IRF6622TRPBF Datasheet Page 10

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IRF6622TR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C15A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1450pF @ 13V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 34W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ SQ
Package / CaseDirectFET™ Isometric SQ

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