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IRF6631TRPBF

IRF6631TRPBF

For Reference Only

Part Number IRF6631TRPBF
PNEDA Part # IRF6631TRPBF
Description MOSFET N-CH 30V 13A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6631TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6631TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6631TRPBF, IRF6631TRPBF Datasheet (Total Pages: 10, Size: 248.11 KB)
PDFIRF6631TRPBF Datasheet Cover
IRF6631TRPBF Datasheet Page 2 IRF6631TRPBF Datasheet Page 3 IRF6631TRPBF Datasheet Page 4 IRF6631TRPBF Datasheet Page 5 IRF6631TRPBF Datasheet Page 6 IRF6631TRPBF Datasheet Page 7 IRF6631TRPBF Datasheet Page 8 IRF6631TRPBF Datasheet Page 9 IRF6631TRPBF Datasheet Page 10

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IRF6631TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1450pF @ 15V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ SQ
Package / CaseDirectFET™ Isometric SQ

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