Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF6635TR1

IRF6635TR1

For Reference Only

Part Number IRF6635TR1
PNEDA Part # IRF6635TR1
Description MOSFET N-CH 30V 32A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,780
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6635TR1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6635TR1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6635TR1, IRF6635TR1 Datasheet (Total Pages: 10, Size: 647.18 KB)
PDFIRF6635 Datasheet Cover
IRF6635 Datasheet Page 2 IRF6635 Datasheet Page 3 IRF6635 Datasheet Page 4 IRF6635 Datasheet Page 5 IRF6635 Datasheet Page 6 IRF6635 Datasheet Page 7 IRF6635 Datasheet Page 8 IRF6635 Datasheet Page 9 IRF6635 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF6635TR1 Datasheet
  • where to find IRF6635TR1
  • Infineon Technologies

  • Infineon Technologies IRF6635TR1
  • IRF6635TR1 PDF Datasheet
  • IRF6635TR1 Stock

  • IRF6635TR1 Pinout
  • Datasheet IRF6635TR1
  • IRF6635TR1 Supplier

  • Infineon Technologies Distributor
  • IRF6635TR1 Price
  • IRF6635TR1 Distributor

IRF6635TR1 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5970pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

The Products You May Be Interested In

BSC350N20NSFDATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

35mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 100V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

ZVNL120CSTOA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

180mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 5V

Rds On (Max) @ Id, Vgs

10Ohm @ 250mA, 5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

85pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

AOI294A

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

AlphaSGT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2305pF @ 50V

FET Feature

-

Power Dissipation (Max)

73W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-251A

Package / Case

TO-251-3 Stub Leads, IPak

BSS126 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Rds On (Max) @ Id, Vgs

500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id

1.6V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

IRF1310NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

36mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

STM32L433CCU6

STM32L433CCU6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 48QFPN

DS2401P+T&R

DS2401P+T&R

Maxim Integrated

IC SILICON SERIAL NUMBER 6TSOC

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

MB96F696RBPMC-GSE1

MB96F696RBPMC-GSE1

Cypress Semiconductor

IC MCU 16BIT 288KB FLASH 100LQFP

LTM8022EV#PBF

LTM8022EV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.8-10V 1A

MMA8451QR1

MMA8451QR1

NXP

ACCELEROMETER 2-8G I2C 16QFN

AT90S1200-4SC

AT90S1200-4SC

Microchip Technology

IC MCU 8BIT 1KB FLASH 20SOIC

SCMT22F505PRBA0

SCMT22F505PRBA0

CAPACITOR 5F 20% 5.5V THRU HOLE

FPF2125

FPF2125

ON Semiconductor

IC LOAD SWITCH ADVANCED SOT23

SC18IS600IBS,157

SC18IS600IBS,157

NXP

IC I2C BUS INTERFACE 24-HVQFN

SESD0402X1BN-0010-098

SESD0402X1BN-0010-098

Littelfuse

TVS DIODE 7V 10V 0402

AC0603FR-0710RL

AC0603FR-0710RL

Yageo

RES SMD 10 OHM 1% 1/10W 0603