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IRF6635TRPBF

IRF6635TRPBF

For Reference Only

Part Number IRF6635TRPBF
PNEDA Part # IRF6635TRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 32A DIRECTFET
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 6,876
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jan 21 - Jan 26 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

IRF6635TRPBF Resources

Brand Infineon Technologies
Mfr. Part NumberIRF6635TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6635TRPBF, IRF6635TRPBF Datasheet (Total Pages: 10, Size: 255.6 KB)
PDFIRF6635TRPBF Datasheet Cover
IRF6635TRPBF Datasheet Page 2 IRF6635TRPBF Datasheet Page 3 IRF6635TRPBF Datasheet Page 4 IRF6635TRPBF Datasheet Page 5 IRF6635TRPBF Datasheet Page 6 IRF6635TRPBF Datasheet Page 7 IRF6635TRPBF Datasheet Page 8 IRF6635TRPBF Datasheet Page 9 IRF6635TRPBF Datasheet Page 10

IRF6635TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5970pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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