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IRF6655TR1

IRF6655TR1

For Reference Only

Part Number IRF6655TR1
PNEDA Part # IRF6655TR1
Description MOSFET N-CH 100V DIRECTFET-SH
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6655TR1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6655TR1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6655TR1, IRF6655TR1 Datasheet (Total Pages: 11, Size: 265.97 KB)
PDFIRF6655TR1 Datasheet Cover
IRF6655TR1 Datasheet Page 2 IRF6655TR1 Datasheet Page 3 IRF6655TR1 Datasheet Page 4 IRF6655TR1 Datasheet Page 5 IRF6655TR1 Datasheet Page 6 IRF6655TR1 Datasheet Page 7 IRF6655TR1 Datasheet Page 8 IRF6655TR1 Datasheet Page 9 IRF6655TR1 Datasheet Page 10 IRF6655TR1 Datasheet Page 11

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IRF6655TR1 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4.8V @ 25µA
Gate Charge (Qg) (Max) @ Vgs11.7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ SH
Package / CaseDirectFET™ Isometric SH

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