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IRF6668TR1PBF

IRF6668TR1PBF

For Reference Only

Part Number IRF6668TR1PBF
PNEDA Part # IRF6668TR1PBF
Description MOSFET N-CH 80V 55A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,346
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6668TR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6668TR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF6668TR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1320pF @ 25V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MZ
Package / CaseDirectFET™ Isometric MZ

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