IRF6798MTR1PBF
For Reference Only
| Part Number | IRF6798MTR1PBF |
| PNEDA Part # | IRF6798MTR1PBF |
| Description | MOSFET N-CH 25V 37A DIRECTFET-MX |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,646 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRF6798MTR1PBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRF6798MTR1PBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IRF6798MTR1PBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 197A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 37A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6560pF @ 13V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MX |
| Package / Case | DirectFET™ Isometric MX |
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