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IRF7322D1PBF

IRF7322D1PBF

For Reference Only

Part Number IRF7322D1PBF
PNEDA Part # IRF7322D1PBF
Description MOSFET P-CH 20V 5.3A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7322D1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7322D1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7322D1PBF, IRF7322D1PBF Datasheet (Total Pages: 8, Size: 178.86 KB)
PDFIRF7322D1PBF Datasheet Cover
IRF7322D1PBF Datasheet Page 2 IRF7322D1PBF Datasheet Page 3 IRF7322D1PBF Datasheet Page 4 IRF7322D1PBF Datasheet Page 5 IRF7322D1PBF Datasheet Page 6 IRF7322D1PBF Datasheet Page 7 IRF7322D1PBF Datasheet Page 8

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IRF7322D1PBF Specifications

ManufacturerInfineon Technologies
SeriesFETKY™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs62mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 15V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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