Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7422D2TR

IRF7422D2TR

For Reference Only

Part Number IRF7422D2TR
PNEDA Part # IRF7422D2TR
Description MOSFET P-CH 20V 4.3A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,424
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7422D2TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7422D2TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7422D2TR, IRF7422D2TR Datasheet (Total Pages: 8, Size: 119.65 KB)
PDFIRF7422D2TR Datasheet Cover
IRF7422D2TR Datasheet Page 2 IRF7422D2TR Datasheet Page 3 IRF7422D2TR Datasheet Page 4 IRF7422D2TR Datasheet Page 5 IRF7422D2TR Datasheet Page 6 IRF7422D2TR Datasheet Page 7 IRF7422D2TR Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7422D2TR Datasheet
  • where to find IRF7422D2TR
  • Infineon Technologies

  • Infineon Technologies IRF7422D2TR
  • IRF7422D2TR PDF Datasheet
  • IRF7422D2TR Stock

  • IRF7422D2TR Pinout
  • Datasheet IRF7422D2TR
  • IRF7422D2TR Supplier

  • Infineon Technologies Distributor
  • IRF7422D2TR Price
  • IRF7422D2TR Distributor

IRF7422D2TR Specifications

ManufacturerInfineon Technologies
SeriesFETKY™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds610pF @ 15V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

ISS17EP06LMXTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id

2V @ 34µA

Gate Charge (Qg) (Max) @ Vgs

1.79nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

55pF @ 30V

FET Feature

-

Power Dissipation (Max)

360W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT23-3-5

Package / Case

TO-236-3, SC-59, SOT-23-3

FQU13N06LTU-WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

115mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

PSMN130-200D,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2470pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR812PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

810pF @ 25V

FET Feature

-

Power Dissipation (Max)

78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

137mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

339pF @ 25V

FET Feature

-

Power Dissipation (Max)

53W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

SS-5-1A-AP

SS-5-1A-AP

Eaton - Electronics Division

FUSE BOARD MNT 1A 250VAC RADIAL

PI3L301DAEX

PI3L301DAEX

Diodes Incorporated

IC MUX/DEMUX 2:1 8 OHM 48TSSOP

2N4416A

2N4416A

Central Semiconductor Corp

JFET N-CH 35V 0.3W TO-72

ECS-327SMO-TR

ECS-327SMO-TR

ECS

XTAL OSC XO 32.7680KHZ CMOS SMD

MC7815CTG

MC7815CTG

ON Semiconductor

IC REG LINEAR 15V 1A TO220AB

AEDS-8011-A11

AEDS-8011-A11

Broadcom

ROTARY ENCODER OPTICAL 500PPR

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

STD03N

STD03N

Sanken

TRANS NPN DARL 160V 15A TO-3P-5

SMA6J33A-TR

SMA6J33A-TR

STMicroelectronics

TVS DIODE 33V 60.8V SMA

DECB33J681KC4B

DECB33J681KC4B

Murata

CAP CER 680PF 6.3KV RADIAL

SMCJ5.0CA

SMCJ5.0CA

TVS DIODE 5V 9.2V DO214AB

SFH655A-X009T

SFH655A-X009T

Vishay Semiconductor Opto Division

OPTOISOLATOR 5.3KV DARL 4SMD