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IRF7459TR

IRF7459TR

For Reference Only

Part Number IRF7459TR
PNEDA Part # IRF7459TR
Description MOSFET N-CH 20V 12A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,114
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7459TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7459TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7459TR, IRF7459TR Datasheet (Total Pages: 8, Size: 112.25 KB)
PDFIRF7459TR Datasheet Cover
IRF7459TR Datasheet Page 2 IRF7459TR Datasheet Page 3 IRF7459TR Datasheet Page 4 IRF7459TR Datasheet Page 5 IRF7459TR Datasheet Page 6 IRF7459TR Datasheet Page 7 IRF7459TR Datasheet Page 8

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IRF7459TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.8V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2480pF @ 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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