Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7467

IRF7467

For Reference Only

Part Number IRF7467
PNEDA Part # IRF7467
Description MOSFET N-CH 30V 11A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,622
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7467 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7467
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7467, IRF7467 Datasheet (Total Pages: 8, Size: 114.5 KB)
PDFIRF7467TR Datasheet Cover
IRF7467TR Datasheet Page 2 IRF7467TR Datasheet Page 3 IRF7467TR Datasheet Page 4 IRF7467TR Datasheet Page 5 IRF7467TR Datasheet Page 6 IRF7467TR Datasheet Page 7 IRF7467TR Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7467 Datasheet
  • where to find IRF7467
  • Infineon Technologies

  • Infineon Technologies IRF7467
  • IRF7467 PDF Datasheet
  • IRF7467 Stock

  • IRF7467 Pinout
  • Datasheet IRF7467
  • IRF7467 Supplier

  • Infineon Technologies Distributor
  • IRF7467 Price
  • IRF7467 Distributor

IRF7467 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.8V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2530pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

TK9A90E,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVIII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3Ohm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 900µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

NDS8410

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

STFW20N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1434pF @ 100V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOWATT-218FX

Package / Case

ISOWATT218FX

SIHP050N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3459pF @ 100V

FET Feature

-

Power Dissipation (Max)

278W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NTJS3151PT2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

60mOhm @ 3.3A, 4.5V

Vgs(th) (Max) @ Id

400mV @ 100µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 12V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88/SC70-6/SOT-363

Package / Case

6-TSSOP, SC-88, SOT-363

Recently Sold

RL2010FK-070R43L

RL2010FK-070R43L

Yageo

RES 0.43 OHM 1% 3/4W 2010

AO3407A

AO3407A

Alpha & Omega Semiconductor

MOSFET P-CH 30V 4.3A SOT23

BC184B

BC184B

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

NJM2121M

NJM2121M

NJR Corporation/NJRC

IC OPAMP GP 2 CIRCUIT 8DMP

STL7N10F7

STL7N10F7

STMicroelectronics

MOSFET N-CH 100V 7A 8POWERFLAT

LT8620EMSE#PBF

LT8620EMSE#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 16MSOP

UCLAMP3301D.TCT

UCLAMP3301D.TCT

Semtech

TVS DIODE 3.3V 9.5V SOD323

AD5546BRUZ

AD5546BRUZ

Analog Devices

IC DAC 16BIT A-OUT 28TSSOP

MTFC4GACAJCN-4M IT

MTFC4GACAJCN-4M IT

Micron Technology Inc.

IC FLASH 32G MMC 153VFBGA

0458002.DR

0458002.DR

Littelfuse

FUSE BRD MNT 2A 48VAC 75VDC 1206

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812