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IRF7509TR

IRF7509TR

For Reference Only

Part Number IRF7509TR
PNEDA Part # IRF7509TR
Description MOSFET N/P-CH 30V 2.7A/2A MICRO8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7509TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7509TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF7509TR, IRF7509TR Datasheet (Total Pages: 8, Size: 217.18 KB)
PDFIRF7509TR Datasheet Cover
IRF7509TR Datasheet Page 2 IRF7509TR Datasheet Page 3 IRF7509TR Datasheet Page 4 IRF7509TR Datasheet Page 5 IRF7509TR Datasheet Page 6 IRF7509TR Datasheet Page 7 IRF7509TR Datasheet Page 8

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IRF7509TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.7A, 2A
Rds On (Max) @ Id, Vgs110mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds210pF @ 25V
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device PackageMicro8™

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.3nC @ 4.5V, 9.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1159pF @ 30V, 930pF @ 30V

Power - Max

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

25mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 15V

Power - Max

1.5W

Operating Temperature

-55°C ~ 150°C (TJ)

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Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

250mA

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

1.3nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

33pF @ 5V

Power - Max

272mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

12-SIP

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