Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7521D1PBF

IRF7521D1PBF

For Reference Only

Part Number IRF7521D1PBF
PNEDA Part # IRF7521D1PBF
Description MOSFET N-CH 20V 2.4A MICRO8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,914
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7521D1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7521D1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7521D1PBF Datasheet
  • where to find IRF7521D1PBF
  • Infineon Technologies

  • Infineon Technologies IRF7521D1PBF
  • IRF7521D1PBF PDF Datasheet
  • IRF7521D1PBF Stock

  • IRF7521D1PBF Pinout
  • Datasheet IRF7521D1PBF
  • IRF7521D1PBF Supplier

  • Infineon Technologies Distributor
  • IRF7521D1PBF Price
  • IRF7521D1PBF Distributor

IRF7521D1PBF Specifications

ManufacturerInfineon Technologies
SeriesFETKY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds260pF @ 15V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro8™
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

The Products You May Be Interested In

SPB04N60S5ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

5.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

22.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SCH1331-S-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

6-SCH

Package / Case

SOT-563, SOT-666

STD90N03L

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2805pF @ 25V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXTH13N110

IXYS

Manufacturer

IXYS

Series

MegaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1100V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

920mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5650pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

IPW80R290C3AXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 100V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

Recently Sold

XC7A75T-2FGG676I

XC7A75T-2FGG676I

Xilinx

IC FPGA 300 I/O 676FBGA

PMEG4010EH,115

PMEG4010EH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

ADM3202ARUZ

ADM3202ARUZ

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

TLJT107M010R0900

TLJT107M010R0900

CAP TANT 100UF 20% 10V 1411

SMBJ45A-E3/52

SMBJ45A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 45V 72.7V DO214AA

MT29F2G16ABBEAHC-AIT:E TR

MT29F2G16ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312

3224W-1-101E

3224W-1-101E

Bourns

TRIMMER 100 OHM 0.25W J LEAD TOP

HSMP-3820-TR1G

HSMP-3820-TR1G

Broadcom

RF DIODE PIN 50V SOT23-3

0451015.MRL

0451015.MRL

Littelfuse

FUSE BRD MNT 15A 65VAC/VDC 2SMD

IS43TR16128CL-125KBLI

IS43TR16128CL-125KBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC