IRF7739L1TRPBF
For Reference Only
| Part Number | IRF7739L1TRPBF |
| PNEDA Part # | IRF7739L1TRPBF |
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 40V 46A DIRECTFETL8 |
| Unit Price |
|
| In Stock | 29,910 |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Payment |  |
| Shipping |  |
| Estimated Delivery | Jul 29 - Aug 3 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [PNEDA-Warranty]* |
IRF7739L1TRPBF Resources
| Brand | Infineon Technologies |
| Mfr. Part Number | IRF7739L1TRPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
IRF7739L1TRPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 270A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 160A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 330nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11880pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET L8 |
| Package / Case | DirectFET™ Isometric L8 |
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
The Products You May Be Interested In
|
Manufacturer Central Semiconductor Corp Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.78A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 460mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.79nC @ 4.5V Vgs (Max) 8V Input Capacitance (Ciss) (Max) @ Vds 43pF @ 25V FET Feature - Power Dissipation (Max) 100mW (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-883 Package / Case SC-101, SOT-883 |
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 60W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 120W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-5-2 Package / Case TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V, 20V Rds On (Max) @ Id, Vgs 10mOhm @ 11A, 20V Vgs(th) (Max) @ Id 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1543pF @ 25V FET Feature - Power Dissipation (Max) 2.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (3x3) Package / Case 8-PowerTDFN |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Quick Inquiry
Add to Shopping Cart
Contact Us
Don't hesitate to contact us if you have any question about IRF7739L1TRPBF.
- CALL US
+86-0755-83210135
- EMAIL
- SKYPE
- WeChat
- Message
