Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7749L2TR1PBF

IRF7749L2TR1PBF

For Reference Only

Part Number IRF7749L2TR1PBF
PNEDA Part # IRF7749L2TR1PBF
Description MOSFET N-CH 60V 375A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,150
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7749L2TR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7749L2TR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7749L2TR1PBF, IRF7749L2TR1PBF Datasheet (Total Pages: 11, Size: 267.22 KB)
PDFIRF7749L2TR1PBF Datasheet Cover
IRF7749L2TR1PBF Datasheet Page 2 IRF7749L2TR1PBF Datasheet Page 3 IRF7749L2TR1PBF Datasheet Page 4 IRF7749L2TR1PBF Datasheet Page 5 IRF7749L2TR1PBF Datasheet Page 6 IRF7749L2TR1PBF Datasheet Page 7 IRF7749L2TR1PBF Datasheet Page 8 IRF7749L2TR1PBF Datasheet Page 9 IRF7749L2TR1PBF Datasheet Page 10 IRF7749L2TR1PBF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7749L2TR1PBF Datasheet
  • where to find IRF7749L2TR1PBF
  • Infineon Technologies

  • Infineon Technologies IRF7749L2TR1PBF
  • IRF7749L2TR1PBF PDF Datasheet
  • IRF7749L2TR1PBF Stock

  • IRF7749L2TR1PBF Pinout
  • Datasheet IRF7749L2TR1PBF
  • IRF7749L2TR1PBF Supplier

  • Infineon Technologies Distributor
  • IRF7749L2TR1PBF Price
  • IRF7749L2TR1PBF Distributor

IRF7749L2TR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5mOhm @ 120A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12320pF @ 25V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET L8
Package / CaseDirectFET™ Isometric L8

The Products You May Be Interested In

SISS66DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

49.1A (Ta), 178.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.38mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85.5nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

3327pF @ 15V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

5.1W (Ta), 65.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S

Package / Case

PowerPAK® 1212-8S

STF15N60M2-EP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2-EP

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

378mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 100V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

R6015KNJTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

37.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1050pF @ 25V

FET Feature

-

Power Dissipation (Max)

184W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

APTM100UM65DAG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

145A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

78mOhm @ 72.5A, 10V

Vgs(th) (Max) @ Id

5V @ 20mA

Gate Charge (Qg) (Max) @ Vgs

1068nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

28500pF @ 25V

FET Feature

-

Power Dissipation (Max)

3250W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP6

Package / Case

SP6

ZVP2110ASTOB

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

Recently Sold

TMMDB3

TMMDB3

STMicroelectronics

DIAC 28-36V 2A MINIMELF

AP2127K-1.8TRG1

AP2127K-1.8TRG1

Diodes Incorporated

IC REG LINEAR 1.8V 300MA SOT23-5

XC18V04PCG44C

XC18V04PCG44C

Xilinx

IC PROM REPROGR 4MB 44-PLCC

L6563H

L6563H

STMicroelectronics

IC PFC CTRLR TRANSITION 16SOIC

DS18S20Z+T&R

DS18S20Z+T&R

Maxim Integrated

SENSOR DIGITAL -55C-125C 8SOIC

AT25F2048N-10SU-2.7

AT25F2048N-10SU-2.7

Microchip Technology

IC FLASH 2M SPI 33MHZ 8SOIC

SMBJ36CA-13-F

SMBJ36CA-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

MCP73862T-I/SL

MCP73862T-I/SL

Microchip Technology

IC LI-ION CTRLR 8.2/8.4V 16SOIC

MX25U3235FZNI-10G

MX25U3235FZNI-10G

Macronix

IC FLASH 32M SPI 104MHZ 8WSON

NE5534AN

NE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

ACS723LLCTR-10AU-T

ACS723LLCTR-10AU-T

Allegro MicroSystems, LLC

SENSOR CURRENT HALL 10A DC

FSA3157P6X

FSA3157P6X

ON Semiconductor

IC SWITCH MULTIMEDIA SC70-6