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IRF7807VD1PBF

IRF7807VD1PBF

For Reference Only

Part Number IRF7807VD1PBF
PNEDA Part # IRF7807VD1PBF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7807VD1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7807VD1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7807VD1PBF, IRF7807VD1PBF Datasheet (Total Pages: 9, Size: 1,149.11 KB)
PDFIRF7807VD1PBF Datasheet Cover
IRF7807VD1PBF Datasheet Page 2 IRF7807VD1PBF Datasheet Page 3 IRF7807VD1PBF Datasheet Page 4 IRF7807VD1PBF Datasheet Page 5 IRF7807VD1PBF Datasheet Page 6 IRF7807VD1PBF Datasheet Page 7 IRF7807VD1PBF Datasheet Page 8 IRF7807VD1PBF Datasheet Page 9

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IRF7807VD1PBF Specifications

ManufacturerInfineon Technologies
SeriesFETKY™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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