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IRF7809AV

IRF7809AV

For Reference Only

Part Number IRF7809AV
PNEDA Part # IRF7809AV
Description MOSFET N-CH 30V 13.3A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7809AV Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7809AV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7809AV, IRF7809AV Datasheet (Total Pages: 8, Size: 200.04 KB)
PDFIRF7809AV Datasheet Cover
IRF7809AV Datasheet Page 2 IRF7809AV Datasheet Page 3 IRF7809AV Datasheet Page 4 IRF7809AV Datasheet Page 5 IRF7809AV Datasheet Page 6 IRF7809AV Datasheet Page 7 IRF7809AV Datasheet Page 8

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IRF7809AV Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs9mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds3780pF @ 16V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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