Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7822TRR

IRF7822TRR

For Reference Only

Part Number IRF7822TRR
PNEDA Part # IRF7822TRR
Description MOSFET N-CH 30V 18A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,068
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7822TRR Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF7822TRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7822TRR, IRF7822TRR Datasheet (Total Pages: 6, Size: 71.47 KB)
PDFIRF7822TRR Datasheet Cover
IRF7822TRR Datasheet Page 2 IRF7822TRR Datasheet Page 3 IRF7822TRR Datasheet Page 4 IRF7822TRR Datasheet Page 5 IRF7822TRR Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7822TRR Datasheet
  • where to find IRF7822TRR
  • Vishay Siliconix

  • Vishay Siliconix IRF7822TRR
  • IRF7822TRR PDF Datasheet
  • IRF7822TRR Stock

  • IRF7822TRR Pinout
  • Datasheet IRF7822TRR
  • IRF7822TRR Supplier

  • Vishay Siliconix Distributor
  • IRF7822TRR Price
  • IRF7822TRR Distributor

IRF7822TRR Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs6.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 16V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

BUK7Y4R8-60EX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

73.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5520pF @ 25V

FET Feature

-

Power Dissipation (Max)

238W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

TK12E80W,S1X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

4V @ 570µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 300V

FET Feature

-

Power Dissipation (Max)

165W (Tc)

Operating Temperature

150°C

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

AOWF12T60P

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

520mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2028pF @ 100V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262F

Package / Case

TO-262-3 Full Pack, I²Pak

STB36NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80.4nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2785pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFU540ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1690pF @ 25V

FET Feature

-

Power Dissipation (Max)

91W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

MT41J128M16JT-093:K

MT41J128M16JT-093:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 96FBGA

DS5000T-32-16+

DS5000T-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP

EMVY500ADA101MHA0G

EMVY500ADA101MHA0G

United Chemi-Con

CAP ALUM 100UF 20% 50V SMD

NL453232T-102J-PF

NL453232T-102J-PF

TDK

FIXED IND 1MH 30MA 40 OHM SMD

AS5040-ASST

AS5040-ASST

ams

ROTARY ENCODER MAGNETIC 512PPR

AD823AR

AD823AR

Analog Devices

IC OPAMP JFET 2 CIRCUIT 8SOIC

L78L05ABZ

L78L05ABZ

STMicroelectronics

IC REG LINEAR 5V 100MA TO92-3

MAX17043G+T

MAX17043G+T

Maxim Integrated

IC 2-WIRE FG MODEL GAUGE LO BATT

SLF12575T-470M2R7-PF

SLF12575T-470M2R7-PF

TDK

FIXED IND 47UH 2.7A 52.8 MOHM

MAX3233EEWP

MAX3233EEWP

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SOIC

MF-MSMF075-2

MF-MSMF075-2

Bourns

PTC RESET FUSE 13.2V 750MA 1812

CRM2512-JW-103ELF

CRM2512-JW-103ELF

Bourns

RES SMD 10K OHM 5% 2W 2512