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IRF7831TR

IRF7831TR

For Reference Only

Part Number IRF7831TR
PNEDA Part # IRF7831TR
Description MOSFET N-CH 30V 21A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7831TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7831TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7831TR, IRF7831TR Datasheet (Total Pages: 10, Size: 264.29 KB)
PDFIRF7831TR Datasheet Cover
IRF7831TR Datasheet Page 2 IRF7831TR Datasheet Page 3 IRF7831TR Datasheet Page 4 IRF7831TR Datasheet Page 5 IRF7831TR Datasheet Page 6 IRF7831TR Datasheet Page 7 IRF7831TR Datasheet Page 8 IRF7831TR Datasheet Page 9 IRF7831TR Datasheet Page 10

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IRF7831TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds6240pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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