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IRF820

IRF820

For Reference Only

Part Number IRF820
PNEDA Part # IRF820
Description MOSFET N-CH 500V 4A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF820 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberIRF820
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF820, IRF820 Datasheet (Total Pages: 12, Size: 288.02 KB)
PDFIRF820 Datasheet Cover
IRF820 Datasheet Page 2 IRF820 Datasheet Page 3 IRF820 Datasheet Page 4 IRF820 Datasheet Page 5 IRF820 Datasheet Page 6 IRF820 Datasheet Page 7 IRF820 Datasheet Page 8 IRF820 Datasheet Page 9 IRF820 Datasheet Page 10 IRF820 Datasheet Page 11

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IRF820 Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds315pF @ 25V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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