Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF8252TRPBF

IRF8252TRPBF

For Reference Only

Part Number IRF8252TRPBF
PNEDA Part # IRF8252TRPBF
Description MOSFET N-CH 25V 25A 8-SO
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 25 - May 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF8252TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF8252TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF8252TRPBF Datasheet
  • where to find IRF8252TRPBF
  • Infineon Technologies

  • Infineon Technologies IRF8252TRPBF
  • IRF8252TRPBF PDF Datasheet
  • IRF8252TRPBF Stock

  • IRF8252TRPBF Pinout
  • Datasheet IRF8252TRPBF
  • IRF8252TRPBF Supplier

  • Infineon Technologies Distributor
  • IRF8252TRPBF Price
  • IRF8252TRPBF Distributor

IRF8252TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5305pF @ 13V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

IRFSL17N20DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FQD2N60CTF_F080

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.7Ohm @ 950mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

235pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 44W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

37mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1280pF @ 25V

FET Feature

-

Power Dissipation (Max)

97W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRF3709LPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2672pF @ 16V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SI4866DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 17A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

ATMEGA328P-15AZ

ATMEGA328P-15AZ

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

ERA-3AEB101V

ERA-3AEB101V

Panasonic Electronic Components

RES SMD 100 OHM 0.1% 1/10W 0603

AP2111MPG-13

AP2111MPG-13

Diodes Incorporated

IC USB SWITCH 2.45A CURR 8MSOP

MBRA210LT3G

MBRA210LT3G

ON Semiconductor

DIODE SCHOTTKY 10V 2A SMA

RB496EATR

RB496EATR

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 20V TSMD5

AK4480EF

AK4480EF

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 216K 30VSOP

PI6C18551WE

PI6C18551WE

Diodes Incorporated

IC CLK BUFFER 1:4 160MHZ 8SOIC

MAX14757EUE+

MAX14757EUE+

Maxim Integrated

IC SWITCH QUAD SPST 16TSSOP

RS1MB-13-F

RS1MB-13-F

Diodes Incorporated

DIODE GEN PURP 1KV 1A SMB

S25FL256SAGMFI000

S25FL256SAGMFI000

Cypress Semiconductor

IC FLASH 256M SPI 133MHZ 16SOIC

L78L05ABUTR

L78L05ABUTR

STMicroelectronics

IC REG LINEAR 5V 100MA SOT89-3