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IRF8306MTR1PBF

IRF8306MTR1PBF

For Reference Only

Part Number IRF8306MTR1PBF
PNEDA Part # IRF8306MTR1PBF
Description MOSFET N-CH 30V 23A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF8306MTR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF8306MTR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF8306MTR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4110pF @ 15V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)2.1W (Ta), 75W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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