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IRF8915TR

IRF8915TR

For Reference Only

Part Number IRF8915TR
PNEDA Part # IRF8915TR
Description MOSFET 2N-CH 20V 8.9A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,884
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF8915TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF8915TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF8915TR, IRF8915TR Datasheet (Total Pages: 10, Size: 285.58 KB)
PDFIRF8915 Datasheet Cover
IRF8915 Datasheet Page 2 IRF8915 Datasheet Page 3 IRF8915 Datasheet Page 4 IRF8915 Datasheet Page 5 IRF8915 Datasheet Page 6 IRF8915 Datasheet Page 7 IRF8915 Datasheet Page 8 IRF8915 Datasheet Page 9 IRF8915 Datasheet Page 10

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IRF8915TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8.9A
Rds On (Max) @ Id, Vgs18.3mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 10V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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