Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF9610STRR

IRF9610STRR

For Reference Only

Part Number IRF9610STRR
PNEDA Part # IRF9610STRR
Description MOSFET P-CH 200V 1.8A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9610STRR Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF9610STRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF9610STRR, IRF9610STRR Datasheet (Total Pages: 10, Size: 201.23 KB)
PDFIRF9610STRR Datasheet Cover
IRF9610STRR Datasheet Page 2 IRF9610STRR Datasheet Page 3 IRF9610STRR Datasheet Page 4 IRF9610STRR Datasheet Page 5 IRF9610STRR Datasheet Page 6 IRF9610STRR Datasheet Page 7 IRF9610STRR Datasheet Page 8 IRF9610STRR Datasheet Page 9 IRF9610STRR Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF9610STRR Datasheet
  • where to find IRF9610STRR
  • Vishay Siliconix

  • Vishay Siliconix IRF9610STRR
  • IRF9610STRR PDF Datasheet
  • IRF9610STRR Stock

  • IRF9610STRR Pinout
  • Datasheet IRF9610STRR
  • IRF9610STRR Supplier

  • Vishay Siliconix Distributor
  • IRF9610STRR Price
  • IRF9610STRR Distributor

IRF9610STRR Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Ta), 20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SSM6K504NU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

19.5mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

4.8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-UDFNB (2x2)

Package / Case

6-WDFN Exposed Pad

STFI10NK60Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAKFP (TO-281)

Package / Case

TO-262-3 Full Pack, I²Pak

TK5A65W,S5X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 170µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 300V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2240pF @ 25V

FET Feature

-

Power Dissipation (Max)

240W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

TP5322K1-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

220V

Current - Continuous Drain (Id) @ 25°C

120mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB (SOT23)

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

MMSZ5229B-7-F

MMSZ5229B-7-F

Diodes Incorporated

DIODE ZENER 4.3V 500MW SOD123

VMMK-1218-TR1G

VMMK-1218-TR1G

Broadcom

FET RF 5V 10GHZ 0402

AD8250ARMZ-RL

AD8250ARMZ-RL

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

STPS0520Z

STPS0520Z

STMicroelectronics

DIODE SCHOTTKY 20V 500MA SOD123

4608X-101-332LF

4608X-101-332LF

Bourns

RES ARRAY 7 RES 3.3K OHM 8SIP

SRU8043-100Y

SRU8043-100Y

Bourns

FIXED IND 10UH 3.5A 30 MOHM SMD

NANOSMDC035F-2

NANOSMDC035F-2

Littelfuse

PTC RESET FUSE 16V 350MA 1206

HCM0703-4R7-R

HCM0703-4R7-R

Eaton - Electronics Division

FIXED IND 4.7UH 5.5A 40 MOHM SMD

MMBT3904-7-F

MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA

GRM21AR72E102KW01D

GRM21AR72E102KW01D

Murata

CAP CER 1000PF 250V X7R 0805

CK45-R3DD102KAVRA

CK45-R3DD102KAVRA

TDK

CAP CER 1000PF 2KV RADIAL