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IRF9910TR

IRF9910TR

For Reference Only

Part Number IRF9910TR
PNEDA Part # IRF9910TR
Description MOSFET 2N-CH 20V 10A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,622
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9910TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF9910TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF9910TR, IRF9910TR Datasheet (Total Pages: 10, Size: 279.62 KB)
PDFIRF9910 Datasheet Cover
IRF9910 Datasheet Page 2 IRF9910 Datasheet Page 3 IRF9910 Datasheet Page 4 IRF9910 Datasheet Page 5 IRF9910 Datasheet Page 6 IRF9910 Datasheet Page 7 IRF9910 Datasheet Page 8 IRF9910 Datasheet Page 9 IRF9910 Datasheet Page 10

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IRF9910TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10A, 12A
Rds On (Max) @ Id, Vgs13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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