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IRF9910TRPBF

IRF9910TRPBF

For Reference Only

Part Number IRF9910TRPBF
PNEDA Part # IRF9910TRPBF
Description MOSFET 2N-CH 20V 10A/12A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,374
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9910TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF9910TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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IRF9910TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10A, 12A
Rds On (Max) @ Id, Vgs9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Current - Continuous Drain (Id) @ 25°C

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

900mW (Ta)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

184pF @ 10V

Power - Max

450mW

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Package / Case

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

850pF @ 10V

Power - Max

5W

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

12-SIP

Supplier Device Package

12-SIP w/fin

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Series

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FET Type

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FET Feature

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Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

IRF9952

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Series

HEXFET®

FET Type

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FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.5A, 2.3A

Rds On (Max) @ Id, Vgs

100mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

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