IRF9953TR
For Reference Only
| Part Number | IRF9953TR | ||||||||||||||||||
| PNEDA Part # | IRF9953TR | ||||||||||||||||||
| Description | MOSFET 2P-CH 30V 2.3A 8-SOIC | ||||||||||||||||||
| Manufacturer | Infineon Technologies | ||||||||||||||||||
| Unit Price |
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| In Stock | 10,503 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRF9953TR Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRF9953TR |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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IRF9953TR Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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