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IRF9Z10PBF

IRF9Z10PBF

For Reference Only

Part Number IRF9Z10PBF
PNEDA Part # IRF9Z10PBF
Description MOSFET P-CH 60V 6.7A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 19,944
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF9Z10PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF9Z10PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF9Z10PBF, IRF9Z10PBF Datasheet (Total Pages: 8, Size: 135.84 KB)
PDFIRF9Z10 Datasheet Cover
IRF9Z10 Datasheet Page 2 IRF9Z10 Datasheet Page 3 IRF9Z10 Datasheet Page 4 IRF9Z10 Datasheet Page 5 IRF9Z10 Datasheet Page 6 IRF9Z10 Datasheet Page 7 IRF9Z10 Datasheet Page 8

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IRF9Z10PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
FET Feature-
Power Dissipation (Max)43W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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