IRF9Z34NSTRLPBF
For Reference Only
| Part Number | IRF9Z34NSTRLPBF |
| PNEDA Part # | IRF9Z34NSTRLPBF |
| Description | MOSFET P-CH 55V 19A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 20,268 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Sep 23 - Sep 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IRF9Z34NSTRLPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IRF9Z34NSTRLPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRF9Z34NSTRLPBF Datasheet
- where to find IRF9Z34NSTRLPBF
- Infineon Technologies
- Infineon Technologies IRF9Z34NSTRLPBF
- IRF9Z34NSTRLPBF PDF Datasheet
- IRF9Z34NSTRLPBF Stock
- IRF9Z34NSTRLPBF Pinout
- Datasheet IRF9Z34NSTRLPBF
- IRF9Z34NSTRLPBF Supplier
- Infineon Technologies Distributor
- IRF9Z34NSTRLPBF Price
- IRF9Z34NSTRLPBF Distributor
IRF9Z34NSTRLPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 65mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.85nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 289pF @ 10V FET Feature - Power Dissipation (Max) 395mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70 Package / Case SC-70, SOT-323 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 75mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 10V FET Feature - Power Dissipation (Max) 1.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
Manufacturer STMicroelectronics Series MDmesh™ DM2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 93mOhm @ 17A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.5V @ 65µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 3.6W (Ta), 68W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/557 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 195mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28.51nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 800mW (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 18-ULCC (9.14x7.49) Package / Case 18-CLCC |
