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IRFB13N50A

IRFB13N50A IRFB13N50A

For Reference Only

Part Number IRFB13N50A
PNEDA Part # IRFB13N50A
Manufacturer Vishay Siliconix
Description MOSFET N-CH 500V 14A TO-220AB
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 417
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

IRFB13N50A Resources

Brand Vishay Siliconix
Mfr. Part NumberIRFB13N50A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB13N50A, IRFB13N50A Datasheet (Total Pages: 10, Size: 293.47 KB)
PDFIRFB13N50A Datasheet Cover
IRFB13N50A Datasheet Page 2 IRFB13N50A Datasheet Page 3 IRFB13N50A Datasheet Page 4 IRFB13N50A Datasheet Page 5 IRFB13N50A Datasheet Page 6 IRFB13N50A Datasheet Page 7 IRFB13N50A Datasheet Page 8 IRFB13N50A Datasheet Page 9 IRFB13N50A Datasheet Page 10

IRFB13N50A Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1910pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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