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IRFB17N20D

IRFB17N20D

For Reference Only

Part Number IRFB17N20D
PNEDA Part # IRFB17N20D
Description MOSFET N-CH 200V 16A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,978
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB17N20D Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFB17N20D
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB17N20D, IRFB17N20D Datasheet (Total Pages: 12, Size: 144.77 KB)
PDFIRFS17N20DTRR Datasheet Cover
IRFS17N20DTRR Datasheet Page 2 IRFS17N20DTRR Datasheet Page 3 IRFS17N20DTRR Datasheet Page 4 IRFS17N20DTRR Datasheet Page 5 IRFS17N20DTRR Datasheet Page 6 IRFS17N20DTRR Datasheet Page 7 IRFS17N20DTRR Datasheet Page 8 IRFS17N20DTRR Datasheet Page 9 IRFS17N20DTRR Datasheet Page 10 IRFS17N20DTRR Datasheet Page 11

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IRFB17N20D Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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