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IRFB20N50KPBF

IRFB20N50KPBF

For Reference Only

Part Number IRFB20N50KPBF
PNEDA Part # IRFB20N50KPBF
Description MOSFET N-CH 500V 20A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB20N50KPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFB20N50KPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB20N50KPBF, IRFB20N50KPBF Datasheet (Total Pages: 9, Size: 329.25 KB)
PDFSIHFB20N50K-E3 Datasheet Cover
SIHFB20N50K-E3 Datasheet Page 2 SIHFB20N50K-E3 Datasheet Page 3 SIHFB20N50K-E3 Datasheet Page 4 SIHFB20N50K-E3 Datasheet Page 5 SIHFB20N50K-E3 Datasheet Page 6 SIHFB20N50K-E3 Datasheet Page 7 SIHFB20N50K-E3 Datasheet Page 8 SIHFB20N50K-E3 Datasheet Page 9

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IRFB20N50KPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2870pF @ 25V
FET Feature-
Power Dissipation (Max)280W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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