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IRFB3307ZGPBF

IRFB3307ZGPBF

For Reference Only

Part Number IRFB3307ZGPBF
PNEDA Part # IRFB3307ZGPBF
Description MOSFET N-CH 75V 120A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB3307ZGPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFB3307ZGPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB3307ZGPBF, IRFB3307ZGPBF Datasheet (Total Pages: 8, Size: 243.58 KB)
PDFIRFB3307ZGPBF Datasheet Cover
IRFB3307ZGPBF Datasheet Page 2 IRFB3307ZGPBF Datasheet Page 3 IRFB3307ZGPBF Datasheet Page 4 IRFB3307ZGPBF Datasheet Page 5 IRFB3307ZGPBF Datasheet Page 6 IRFB3307ZGPBF Datasheet Page 7 IRFB3307ZGPBF Datasheet Page 8

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IRFB3307ZGPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4750pF @ 50V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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