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IRFB4610

IRFB4610

For Reference Only

Part Number IRFB4610
PNEDA Part # IRFB4610
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 73A TO-220AB
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 6,966
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jul 29 - Aug 3 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

IRFB4610 Resources

Brand Infineon Technologies
Mfr. Part NumberIRFB4610
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB4610, IRFB4610 Datasheet (Total Pages: 11, Size: 450.36 KB)
PDFIRFSL4610 Datasheet Cover
IRFSL4610 Datasheet Page 2 IRFSL4610 Datasheet Page 3 IRFSL4610 Datasheet Page 4 IRFSL4610 Datasheet Page 5 IRFSL4610 Datasheet Page 6 IRFSL4610 Datasheet Page 7 IRFSL4610 Datasheet Page 8 IRFSL4610 Datasheet Page 9 IRFSL4610 Datasheet Page 10 IRFSL4610 Datasheet Page 11

IRFB4610 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3550pF @ 50V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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