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IRFB9N60A

IRFB9N60A

For Reference Only

Part Number IRFB9N60A
PNEDA Part # IRFB9N60A
Description MOSFET N-CH 600V 9.2A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,390
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB9N60A Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFB9N60A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB9N60A, IRFB9N60A Datasheet (Total Pages: 9, Size: 298.15 KB)
PDFIRFB9N60A Datasheet Cover
IRFB9N60A Datasheet Page 2 IRFB9N60A Datasheet Page 3 IRFB9N60A Datasheet Page 4 IRFB9N60A Datasheet Page 5 IRFB9N60A Datasheet Page 6 IRFB9N60A Datasheet Page 7 IRFB9N60A Datasheet Page 8 IRFB9N60A Datasheet Page 9

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IRFB9N60A Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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