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IRFBC30AL

IRFBC30AL

For Reference Only

Part Number IRFBC30AL
PNEDA Part # IRFBC30AL
Description MOSFET N-CH 600V 3.6A TO-262
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBC30AL Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBC30AL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBC30AL, IRFBC30AL Datasheet (Total Pages: 12, Size: 271.94 KB)
PDFIRFBC30ASTRRPBF Datasheet Cover
IRFBC30ASTRRPBF Datasheet Page 2 IRFBC30ASTRRPBF Datasheet Page 3 IRFBC30ASTRRPBF Datasheet Page 4 IRFBC30ASTRRPBF Datasheet Page 5 IRFBC30ASTRRPBF Datasheet Page 6 IRFBC30ASTRRPBF Datasheet Page 7 IRFBC30ASTRRPBF Datasheet Page 8 IRFBC30ASTRRPBF Datasheet Page 9 IRFBC30ASTRRPBF Datasheet Page 10 IRFBC30ASTRRPBF Datasheet Page 11

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IRFBC30AL Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
FET Feature-
Power Dissipation (Max)74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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