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IRFBC30ASPBF

IRFBC30ASPBF

For Reference Only

Part Number IRFBC30ASPBF
PNEDA Part # IRFBC30ASPBF
Description MOSFET N-CH 600V 3.6A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 21,252
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBC30ASPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBC30ASPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBC30ASPBF, IRFBC30ASPBF Datasheet (Total Pages: 12, Size: 271.94 KB)
PDFIRFBC30ASTRRPBF Datasheet Cover
IRFBC30ASTRRPBF Datasheet Page 2 IRFBC30ASTRRPBF Datasheet Page 3 IRFBC30ASTRRPBF Datasheet Page 4 IRFBC30ASTRRPBF Datasheet Page 5 IRFBC30ASTRRPBF Datasheet Page 6 IRFBC30ASTRRPBF Datasheet Page 7 IRFBC30ASTRRPBF Datasheet Page 8 IRFBC30ASTRRPBF Datasheet Page 9 IRFBC30ASTRRPBF Datasheet Page 10 IRFBC30ASTRRPBF Datasheet Page 11

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IRFBC30ASPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
FET Feature-
Power Dissipation (Max)74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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