Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFBC40STRR

IRFBC40STRR

For Reference Only

Part Number IRFBC40STRR
PNEDA Part # IRFBC40STRR
Description MOSFET N-CH 600V 6.2A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBC40STRR Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBC40STRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBC40STRR, IRFBC40STRR Datasheet (Total Pages: 11, Size: 324.16 KB)
PDFIRFBC40STRR Datasheet Cover
IRFBC40STRR Datasheet Page 2 IRFBC40STRR Datasheet Page 3 IRFBC40STRR Datasheet Page 4 IRFBC40STRR Datasheet Page 5 IRFBC40STRR Datasheet Page 6 IRFBC40STRR Datasheet Page 7 IRFBC40STRR Datasheet Page 8 IRFBC40STRR Datasheet Page 9 IRFBC40STRR Datasheet Page 10 IRFBC40STRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFBC40STRR Datasheet
  • where to find IRFBC40STRR
  • Vishay Siliconix

  • Vishay Siliconix IRFBC40STRR
  • IRFBC40STRR PDF Datasheet
  • IRFBC40STRR Stock

  • IRFBC40STRR Pinout
  • Datasheet IRFBC40STRR
  • IRFBC40STRR Supplier

  • Vishay Siliconix Distributor
  • IRFBC40STRR Price
  • IRFBC40STRR Distributor

IRFBC40STRR Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 130W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IPP60R380E6XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

110V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

ATP404-H-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ATPAK

Package / Case

ATPAK (2 leads+tab)

EPC2040

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

15V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

30mOhm @ 1.5A, 5V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

0.93nC @ 5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

105pF @ 6V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

IRF830L

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

NC7SP125P5X

NC7SP125P5X

ON Semiconductor

IC BUF NON-INVERT 3.6V SC70-5

LT1167ACS8#PBF

LT1167ACS8#PBF

Linear Technology/Analog Devices

IC INST AMP 1 CIRCUIT 8SO

ES1JFL

ES1JFL

ON Semiconductor

DIODE GEN PURP 600V 1A SOD123F

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

FSA5157L6X

FSA5157L6X

ON Semiconductor

IC SWITCH SPDT 6MICROPAK

PM200DV1A120

PM200DV1A120

Powerex Inc.

MOD IPM V1 DUAL 200A 1200V

SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 55A POWERPAKSO-8

AD7994BRU-0REEL

AD7994BRU-0REEL

Analog Devices

IC ADC 12BIT SAR 16TSSOP

CPH3225A

CPH3225A

Seiko Instruments

CAP 11MF 3.3V SURFACE MOUNT

LM393DR

LM393DR

Rohm Semiconductor

IC COMPARATOR DUAL 0.8MA 8-SOIC

LBM2016T330J

LBM2016T330J

Taiyo Yuden

FIXED IND 33UH 125MA 3.6 OHM SMD

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3