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IRFBE20PBF

IRFBE20PBF

For Reference Only

Part Number IRFBE20PBF
PNEDA Part # IRFBE20PBF
Description MOSFET N-CH 800V 1.8A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBE20PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBE20PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBE20PBF, IRFBE20PBF Datasheet (Total Pages: 9, Size: 1,146.69 KB)
PDFIRFBE20STRR Datasheet Cover
IRFBE20STRR Datasheet Page 2 IRFBE20STRR Datasheet Page 3 IRFBE20STRR Datasheet Page 4 IRFBE20STRR Datasheet Page 5 IRFBE20STRR Datasheet Page 6 IRFBE20STRR Datasheet Page 7 IRFBE20STRR Datasheet Page 8 IRFBE20STRR Datasheet Page 9

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IRFBE20PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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