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IRFBE30PBF

IRFBE30PBF

For Reference Only

Part Number IRFBE30PBF
PNEDA Part # IRFBE30PBF
Description MOSFET N-CH 800V 4.1A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 29,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBE30PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBE30PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBE30PBF, IRFBE30PBF Datasheet (Total Pages: 9, Size: 1,594.73 KB)
PDFIRFBE30 Datasheet Cover
IRFBE30 Datasheet Page 2 IRFBE30 Datasheet Page 3 IRFBE30 Datasheet Page 4 IRFBE30 Datasheet Page 5 IRFBE30 Datasheet Page 6 IRFBE30 Datasheet Page 7 IRFBE30 Datasheet Page 8 IRFBE30 Datasheet Page 9

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IRFBE30PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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