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IRFBE30SPBF

IRFBE30SPBF

For Reference Only

Part Number IRFBE30SPBF
PNEDA Part # IRFBE30SPBF
Description MOSFET N-CH 800V 4.1A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 17,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBE30SPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBE30SPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBE30SPBF, IRFBE30SPBF Datasheet (Total Pages: 11, Size: 507.75 KB)
PDFIRFBE30S Datasheet Cover
IRFBE30S Datasheet Page 2 IRFBE30S Datasheet Page 3 IRFBE30S Datasheet Page 4 IRFBE30S Datasheet Page 5 IRFBE30S Datasheet Page 6 IRFBE30S Datasheet Page 7 IRFBE30S Datasheet Page 8 IRFBE30S Datasheet Page 9 IRFBE30S Datasheet Page 10 IRFBE30S Datasheet Page 11

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IRFBE30SPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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