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IRFBF30

IRFBF30

For Reference Only

Part Number IRFBF30
PNEDA Part # IRFBF30
Description MOSFET N-CH 900V 3.6A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,614
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBF30 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBF30
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBF30, IRFBF30 Datasheet (Total Pages: 9, Size: 1,147.67 KB)
PDFIRFBF30L Datasheet Cover
IRFBF30L Datasheet Page 2 IRFBF30L Datasheet Page 3 IRFBF30L Datasheet Page 4 IRFBF30L Datasheet Page 5 IRFBF30L Datasheet Page 6 IRFBF30L Datasheet Page 7 IRFBF30L Datasheet Page 8 IRFBF30L Datasheet Page 9

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IRFBF30 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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